Interacting fermions on a lattice can develop strong quantum correlations, which lie at the heart of the classical intractability of many exotic phases of matter [1, 2, 3, 4]. Seminal efforts are underway in the control of artificial quantum systems, that can be made to emulate the underlying Fermi-Hubbard models [5, 6, 7, 8,9,10,11]. Electrostatically confined conduction band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical pure-state initialisation and readily adhere to an engineerable Fermi-Hubbard Hamiltonian [12,13,14,15,16,17,18,19,20,21,22,23]. Until now, however, the substantial electrostatic disorder inherent to solid state has made attempts at emulating Fermi-Hubbard physics on solid-state platforms few and far between [24,25]. Here, we show that for gate-defined quantum dots, this disorder can be suppressed in a controlled manner. Novel insights and a newly developed semi-automated and scalable toolbox allow us to homogeneously and independently dial in the electron filling and nearest-neighbour tunnel coupling. Bringing these ideas and tools to fruition, we realize the first detailed characterization of the collective Coulomb blockade transition [26], which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition [1]. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here show how quantum dots can be used to investigate the physics of ever more complex many-body states.
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers. arXiv:1901.00426v1 [cond-mat.mes-hall]
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
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