The Angle-Resolved Photoemission Electron Spectroscopy (AR PES) was applied to investigate the electronic structure of HgSe and Hg1-xFexSe crystals for (110) surface. The measured set of Angle-Resolved Energy Distribution Curves (AR EDCs) permits to determine some of the elements of the electronic band structure E(k) (energy-momentum dependence for Ґ KX and ҐX directions ir. the Brillouin zone) for measured crystals. The Fe 3d contribution gives the states 1aying over the edge of the valence band of HgSe crystal (0.25 eV), and into the valence band.
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