We report the epitaxial growth of CryGe1−y and CryMnxGe1−x−y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p type, and hole densities increase with Cr concentration. The CryGe1−y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y⩽0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1−x host systematically reduces the Curie temperature and total magnetization.
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