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Spin-phonon coupling mediated by single ion anisotropy was investigated using optical spectroscopy and first-principles calculations in the all-in-all-out pyrochlore magnet Cd_{2}Os_{2}O_{7}. Clear anomalies were observed in both the phonon frequencies and linewidths at the magnetic ordering temperature. The renormalization of the phonon modes was exceptionally large, signifying the presence of an unconventional magnetoelastic term from large spin-orbit coupling. In addition, the relative phonon frequency shifts show a strong correlation with the modulation of noncubic crystal field by the corresponding lattice distortion. Our observation establishes a new type of spin-phonon coupling through single ion anisotropy, a second-order spin-orbit coupling term, in Cd_{2}Os_{2}O_{7}.

SUMMARYCompared to the large number of curved quadrilateral degenerated-and solid-shell elements, there are only a very few curved triangular degenerated-and solid-shell elements. Based on the assumed natural strain sampling scheme previously developed for a quadratic degenerated-shell element for linear analysis, this paper devises geometric non-linear six-node degenerated-shell and twelve-node solid-shell elements. Both elements can be curved and are only equipped with the standard nodal d.o.f.s. Careful consideration has been exercised to circumvent various locking phenomena that plague degenerated-and solid-shell elements. Numerical examples are presented to illustrate their e cacy.

MetS may be a potent predictor of functional outcome after ischaemic stroke.

We report the observation of a new type of intrinsic defect in n-In0.5Ga0.5P which can be generated by recombination enhanced defect reaction (REDR) mechanism. It is observed that the increases of the concentrations of this defect and of another native defect due to REDR have nearly linear time dependence before saturation. This observation and other experimental results suggest that the two observed defects are complex defects. Other electrical properties of these defects such as alloy broadening effect on the thermal ionization energy are also described.

We report the occurrence of haemorrhage in a meningioma after gamma knife surgery.A 52-year-old woman had undergone gamma knife radiosurgery for a growing meningioma in the left tentorial hiatus three years earlier (A radiation dose of 15 Gy was administered to the margin, with a maximum dose of 30 Gy, Fig. 1a). The size of the mass decreased steadily, and central lucency was seen in the follow-up magnetic resonance images, a usual finding seen after gamma knife surgery (MRI, Fig. 1b). However, a MRI taken at the 30-month follow-up showed the tumour to be swollen, and peritumoural oedema had increased (Fig. 1c). Three years later, apoplectic symptoms occurred, and computed tomography revealed a peritumoural haemorrhage, with oedema (Fig. 1d). An emergency craniotomy was carried out, and the biopsy showed a transitional type of meningioma, with vasculopathy and necrosis. After operation she had a right hemiparesis and a visual defect.

We have developed a fast programmable trigger processor board based on a field programmable gate array and a complex programmable logic device for use in the BELLE experiment. The trigger board accommodates 144 ECL input signals, 2 NIM input signals, 24 ECL output signals, and the VME bus specification. An asynchronous trigger logic for counting isolated clusters is used. We have obtained trigger latency of 50 ns with a full access to input and output signals via a VME interface. The trigger logic can be modified at any time depending on the experimental conditions.

This work is a study of the formation of interface traps in Au/n−In0.5Ga0.5P contacts. The effects of heat treatment near the ohmic alloying temperature on the characteristics of the Schottky diodes are studied using current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy measurements. New interface states that are distributed around 0.73 eV below the conduction band minimum were generated by heat treatment above 350 °C before metallization. In a sample that was heat treated at 400 °C for 30 min, the maximum density of generated interface states was estimated to be approximately 2×1011 cm−2 eV−1. The origin of these interface states is attributed to the transformation of a phosphorus vacancy that is generated by the vaporization of phosphorus from the surface of In0.5Ga0.5P.