Articles you may be interested inEffects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices Appl.Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal-oxide-semiconductor field effect transistors J. Vac. Sci. Technol. B 16, 628 (1998); 10.1116/1.589873Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal-oxide-semiconductor field effect transistor Hot-carrier damage is a major issue in the long-term reliability of metal-oxide-semiconductor field effect transistors ͑MOSFETs͒. Hot-carrier induced damages have been shown to degrade various MOSFET characteristics-threshold voltage, channel charge mobility, parasitic drain and source resistances, and parasitic drain capacitance. The degradation induces changes in the small-signal s parameters of MOSFETs. Further experimental results indicate that such damages also degrade the radio frequency ͑rf͒ noise characteristics of a LLD n-type MOSFET ͑NMOSFET͒. The minimum noise figure (NF min ) and the normalized noise resistance (r n ) -two key noise parameters-increase due to hot-carrier stress. The optimal reflection coefficient (⌫ opt ) versus frequency curve also changes with increase stressing. The degradation in the rf noise characteristics of the LDD NMOSFET implies a serious issue in designing reliable, low-noise rf circuits with MOSFETs.
This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10−24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10−24 A2/Hz for f=10 Hz.
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