C. Gousset scite author profile

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several ebeam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO 2 / Si wafers. Interdiffusion in the multilayers for annealing temperatures (380-430°C) larger than the Au-Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO 2 were found to have the best characteristics for bonding. This was confirmed by bonding experiments.

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Fabrication of UV-transparent SixOyNz membranes with a low frequency PECVD reactor

Danaie¹,

Bosseboeuf²,

Clerc³

et al. 2002

Sensors and Actuators A: Physical

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RAPD genetic homogeneity and high levels of bacterial wilt tolerance in Solanum torvum Sw. (Solanaceae) accessions from Reunion Island

et al. 2004

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C. Gousset

Solanum torvum, as a useful source of resistance against bacterial and fungal diseases for improvement of eggplant (S. melongena L.)

Gold metallizations for eutectic bonding of silicon wafers

Fabrication of UV-transparent SixOyNz membranes with a low frequency PECVD reactor

RAPD genetic homogeneity and high levels of bacterial wilt tolerance in Solanum torvum Sw. (Solanaceae) accessions from Reunion Island

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