Quantized breakdown voltage states are observed in a second, wide, highquality GaAs/AlGaAs sample made from another wafer, demonstrating that quantization of the longitudinal voltage drop along the sample is a general feature of the quantum Hall effect in the breakdown regime. The voltage states are interpreted in a simple energy conservation model as occurring when electrons are excited to higher Landau levels and then return to the original level. A spectroscopic study of these dissipative voltage states reveals how well they are quantized. The statistical variations of the quantized voltages increase linearly with quantum number.
We estimate the maximum values of the electric field across the width of a GaAs/AlGaAs heterostructure quantum Hall effect sample at several currents when the sample is in the breakdown regime. This estimate is accomplished by measuring the quantized longitudinal voltage drops along a length of the sample and then employing a quasielastic inter-Landau level scattering (QUILLS) model to calculate the electric field. We also present a pictorial description of how QUILLS transitions occurring between states distributed across the sample width can be detected as voltage signals along the sample length.
The potential and current distributions are calculated across the width of a quantum Hall effect sample for applied currents between 0 μA and 225 μA. For the first time, both a confining potential and a current-induced charge-redistribution potential are used. The confining potential has a parabolic shape, and the charge-redistribution potential is logarithmic. The solution for the sum of the two types of potentials is unique at each current, with no free parameters. For example, the charge-depletion width of the confining potential is determined from a localization experiment by Choi, Tsui, and Alavi, and the spatial extent of the conducting two-dimensional electron gas across the sample width is obtained from the maximum electric field deduced from a high-current breakdown experiment by Cage and Lavine, and from the quantum Hall voltage. The spatial extent has realistic cut-off values at the sample sides; e.g., no current flows within 55 magnetic lengths of the sides for currents less than 215 μA. The calculated potential distributions are in excellent agreement with contactless electro-optic effect laser beam measurements of Fontein et al.
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