A single crystal of antimony telluride, grown from elements of semiconductor purity by means of the Bridgman method, is characterised by the departure from stoichiometry as determined from energy dispersive X‐ray spectroscopy, by the concentration of free charge carriers p as obtained from the interpretation of the reflectivity spectra in the plasma resonance frequency range, by its density d, and by lattice parameters a and c. The investigated crystal of stoichiometry Sb2Te2.948 has the following values: p = 6.714 × 1019 cm−3, d = (6.50 ± 0.01) g cm−3, a = 0.42643(5) nm, c = 3.0427(4) nm. The departure from stoichiometry is explained using a model taking into account the existence of antisite Sb'Te defects as well as tellurium and antimony vacancies in the crystal lattice: this model in connection with the experimental data allows us to calculate the concentration of Sb'Te defects and to determine their formation energy EAS = (0.32 ± 0.01) eV.
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