Holetrapping sites and the mechanism of the photostimulated luminescence of the xray storage phosphor RbI:Tl+The oxygen-free x-ray storage phosphor BaFBr, doped with Sr 2ϩ and having Br Ϫ vacancies due to fluorine excess, is shown to have a high photostimulability shifted appreciably to lower photon energy compared to nondoped BaFBr because of the predominant generation of F A ͑Sr 2ϩ ͒ centers on the Br Ϫ sublattice upon room-temperature x irradiation. The F A ͑Br Ϫ ,Sr 2ϩ ͒ centers are less stable than unperturbed F͑Br Ϫ ͒ centers. Therefore, the redshift of the photostimulability disappears upon thermal activation above room temperature. From the failure to observe an F center infrared emission, it is concluded that F and F A centers are spatially correlated to hole centers of yet unknown nature.
Radiation damage centers generated by x irradiation at 80 and 300 K in the storage phosphor RbI:Tl+ were investigated with optically detected magnetic resonance and optical measurements. It is shown that the intensity of the photostimulated luminescence depends on the concentration of Tl2+ centers. Bleaching into any of the seven identified Tl2+ absorption bands destroys the Tl2+ centers and leads to a Tl+ emission as well as to VK centers. Proportionally to photodestruction of Tl2+ centers, the photostimulated luminescence is decreased. The traps for information storage in RbI:Tl+ are F centers and Tl2+ centers.
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