Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E 1 ϭ0.234Ϯ0.006, E 2 ϭ0.578Ϯ0.006, E 3 ϭ0.657Ϯ0.031, E 4 ϭ0.961Ϯ0.026, and E 5 ϭ0.240Ϯ0.012 eV. Among these, the levels labeled E 1 , E 2 , and E 3 are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic chemical vapor deposition. Levels E 4 and E 5 do not correspond to any previously reported defect levels, and are characterized for the first time in our studies.
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