Amorphous Sm(Fe11Ti) ribbons were prepared by melt spinning. After heat treatment, very fine grains (≊50 nm) of the ThMn12-structure phase were obtained with no signs of a separate intergranular phase. Each grain appears to be a single domain. The maximum room-temperature coercivity is 0.56 T, rising to 1.20 T at 11 K. A model is proposed for the coercivity which is based on an analogy with the random anisotropy model of amorphous magnetism. It gives the correct magnitude of the coercivity, and suggests it should vary as the reciprocal of the crystallite size.
Lead scandium tantalate (PST) films with a lead-rich composition were deposited at 500°C by RF sputtering on sapphire substrates coated with Pt and were investigated by cross-sectional transmission electron microscopy. The films consisted almost entirely of the perovskite phase. The grains of perovskite PST had a crystallographic orientation almost parallel to that of the underlying Pt . Some elongated voids were observed. The presence of an interfacial phase, with interplanar spacings consistent with a pyrochlore phase, was demonstrated by electron diffraction and dark-field imaging. The crystallographic orientation of this phase is also nearly parallel to that of the Pt. Energy-dispersive X-ray microanalysis showed that the interfacial phase is lead-deficient. The interfacial phase is irregular in thickness. A reduction in the Pb content of the film leads to a thicker interfacial layer. The implications for the mechanism of growth of PST on Pt and for improvement of the film quality are discussed.
Structures of cobalt disilicide layers fabricated by ion beam synthesis on (001) silicon wafers have been studied by cross-sectional transmission electron microscopy. Implantation at 350 °C with doses of 5 and 7×1017 cm−2 of 200 keV Co+ ions was used, followed by rapid thermal annealing. For the as-implanted wafer with the lower dose, a CoSi2 layer in a parallel (A-type) epitaxial orientation was formed, and below this there were CoSi2 precipitates, some in twinned (B-type) orientations, and {113} defects. With the higher dose, polycrystalline CoSi was also present at the surface and there was substantial surface roughening. For the annealed wafers, as the annealing temperature increased from 700 to 1100 °C, the CoSi2 layer progressively increased in thickness, and the CoSi at the surface of the CoSi2 layer was eliminated. In the silicon beneath the silicide layer, the CoSi2 precipitates were greatly reduced in number and the {113} defects were eliminated.
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