Several different spare modules of the D0 experiment Silicon Microstrip Tracker (SMT) have been irradiated at the Fermilab Booster Radiation Damage Facility (RDF). The total dose received was 2.1 MRads with a proton flux of ~3·10 11 p/cm 2 sec. The irradiation was carried out in steps of 0.3 or 0.6 MRad, with several days between the steps to allow for annealing and measurements. The leakage currents and depletion voltages of the devices increased with dose, as expected from bulk radiation damage. The double sided, double metal devices showed worse degradation than the less complex detectors.