We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) chamber with Ar-diluted SiH4, and N2 gas. Variable-angle spectroscopic ellipsometry was used to determine the thickness and refractive index of the silicon nitride films, which ranged from 300 to 650 nm and 1.8 to 2.1 at 638 nm, respectively. We used Rutherford backscattering spectrometry to determine the chemical composition of the films, including oxygen contamination, and elastic recoil detection to characterize the removal of hydrogen after annealing. The as-deposited films are found to have variable relative silicon and nitrogen compositions with significant oxygen content and hydrogen incorporation of 10–20 and 17–21%, respectively. Atomic force microscopy measurements show a decrease in root mean square roughness after annealing for a variety of films. Prism coupling measurements show losses as low as 1.3, 0.3 and 1.5 ± 0.1 dB/cm at 638, 980 and 1550 nm, respectively, without the need for post-process annealing. Based on this study, we find that the as-deposited ECR-PECVD SiOxNy:Hz films have a suitable thickness, refractive index and optical loss for their use in visible and near-infrared integrated photonic devices.
YBaCuO films with (001) orientation have been deposited on MgO by laser ablation at 248 and 193 nm wavelengths. Transitions to zero resistance at 87 K and 90 K have been reproducibly achieved in the respective cases. Optical spectroscopic studies of the plume show the importance of molecular species in the ablation if good superconducting films are to be formed. The substrate position in the plume and substrate temperature are important in determining film quality. The influence of oxygen gas pressure can be significant. SEM studies show the occurrence of second-phase outcrops with a needle-like morphology aligned over the whole area of the film along two mutually perpendicular directions on the film surface. Film orientation is determined by XRD and R against T is measured down to 80 K in a hydrogen exchange gas cryostat. Characterization studies of device-related multilayer YBaCuO/PrBaCuO structures by XRD are presented.
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