Hall-effect measurements were carried out on a series of Co100−xPdx alloys from 4.2 to 255 K. The extraordinary Hall coefficient RS is analyzed. The side-jump mechanism is dominant for Co-Pd alloys with x≤65 at. %; however, when x≳65 at. %, both the side-jump and skew scattering mechanisms are equally effective. The Hall conductivity γH changes its sign around xH=77 at. %. xH is shifted to the right-hand side of the band-gap position xG, as implied from the anisotropic magnetoresistance data and the split-band theory.
InP epilayers were grown on semi-insulating InP substrates by liquid phase epitaxy with Prz03doping. Most grown layers yield mirror-like surfaces and good crystal quality. Hall measurements indicate that n-type background concentration of those grown InP layers will decrease from a value of 2.8 x lo'' to 3.0 x 10l6 ~m -~. Their correspondent 77 K mobility also varied from a value of 1326 to 3775 cm2/V s. The photoluminescence (PL) spectra of PrzOa-doped InP epilayers display narrower FWHM and stronger intensity ratios (for band peak to the impurity peak). These PL spectra also demonstrate that the grown layers exhibit a pure crystal quality.
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