Copper and its oxides are involved in many electronic materials applications. Cuprous oxide (Cu2O)is a semiconductor finding usage as a thin-film solar-cell material. The copper-oxide-based hightemperature superconductor materials have been extensively investigated. Also, the adhesion andbonding ofcopper to ceramic substrates is of interest for usage in electronic device packaging applications. For the case of alumina substrates, it has been demonstrated that the adhesion properties of thin copper wires is optimized for a ternary bonding environment at the interface. For the growth of oxidematerials, pulsed-laser ablation (PLA) is a viable means of growing films, and allows materials with a wide range of stoichiometrics to be produced. Indeed, this technique has found wide application inthe growth of high-temperature superconductors. In a previous study on PLA growth of CuO and Cu2O, Ogale etal. reported the growth of continuous epitactic Cu2O films on (100) MgO substrates at 700°C, whereas growth onto silicon and zirconia produced polycrystalline films.
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