Thin films of Pb0.8Sn0.2Te of thicknesses varying between 360 Å and 3400 Å have been prepared by flash evaporation on cleaned glass substrates held at room temperature. Thermoelectric power (TEP) of these films has been evaluated by measuring the thermal emf developed by the integral method in the temperature range 300 K to 500 K. It has been found that TEP of all the films is positive and increases with temperature in the low temperature region and tends to saturate at high temperatures, beyond 400 K. This has been attributed to the pinning of the Fermi level at high temperatures. It was also found that these films did not show the expected linear dependence of TEP on the inverse film thickness.
Ph&no.BTe thin films of different thicknesses have been deposited on glass substrates by flash evaporation. Electrical resistivity and thermoelectric power measurements have been carried out in the temperature range 30C-500 K as a function of film thickness. The thickness dependence of the electrical resistivity and thermoelectric power observed has been explained using the effective mean free path model of classical size effect theoly. The thermoelectric power factor was calculated from the measured values of electrical resistivity and thermoelectric power. The thermoelectric power factor is found to be dependent on thickness and temperature. By taking thermal conductivity values from the literature, the thermoelectric figure of merit was also calculated and it was found that this too was dependent on the temperature and thickness.
Thermoelectric properties of undoped polycrystal (Bi2Te3)0.2(Sb2Te3)0.8 by PIES method AIP Conf. Proc. 316, 267 (1994); 10.1063/1.46813Sputter deposition of multilayer thermoelectric films: An approach to the fabrication of twodimensional quantum wells AIP Conf.
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