A basic module for an integrated optical phase difference measurement and correction system was developed and fabricated in the GaAs-AlGaAs material system. The implemented device made it possible to measure the relative phase difference between two waveguides using a small fraction of the power (<10%) for diagnostic purposes. This proof-of-concept device incorporated waveguides, waveguide couplers and Y-junctions, phase modulators, and photodetectors on the same substrate. This thesis describes the design, fabrication and operation of the implemented device. Waveguide phase modulators with Vx=5.0V for =-0.865gm were fabricated. Selective Be ion implantation and rapid thermal annealing was used to form the p+-n--n + modulator structure. The phase was modulated via the linear electrooptic effect in the reverse-biased p+-n--n + structure. A Y-junction interferometer was used to obtain the relative phase difference between the two waveguides. Integrated MSM photodetectors, 17x69gm in size, with TIR mirror coupling were used for signal detection. Both, the interferometer and detector were fabricated and operated between two, 30gtm separated waveguides. A phase dither detection system made it possible to determine the relative phase between two waveguides largely independent of the power ratio between the individual guides.
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