In this study, Ag thin films deposited on glass were etched using inductively coupled Cl 2-based plasmas and the effects of various Cl 2-based gas mixtures on the formation of reactive byproducts affecting Ag etching were investigated. When Cl 2based gas mixtures were used with Ar and O 2 , due to the very low vapor pressure of the etch products, thick etch products remaining on the substrate could be observed after the etching. However, these etch products were easily removed during the photoresist stripping by a photoresist stripper. In particular, when O 2 was added to Cl 2 , higher Ag removal rates during the photoresist stripping than those by pure Cl 2 or O 2 could be obtained. These results are interpreted as the formations of more porous and reactive etch reaction products when O 2 was added to Cl 2. The Ag removal rates by Cl 2 /O 2 /50%N 2 estimated after the photoresist stripping were higher than those by Cl 2 /O 2 /50%Ar and the use of Cl 2 /O 2 /50%Ar resulted in higher Ag etch rates than those by Cl 2 /50%Ar. Therefore, the physical and chemical properties of the etch products formed by the specific gas mixture appear to be important in removing Ag for Cl 2-based plasmas.
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