Atomic migration under an electric field, electromigration, in molten and crystalline Ge2Sb2Te5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse (∼10−3 s), Ge2Sb2Te5 was melted by Joule heating, and an electrostatic force-induced drift of Ge and Sb toward the cathode and Te toward the anode was observed. Effective charge numbers were calculated to be 0.28, 0.38, and −0.29 for Ge, Sb, and Te, respectively. Electromigration in the crystalline state was studied by applying a 10 MHz pulsed dc; constituent elements migrated toward the cathode, which suggests a hole wind-force operating in this phase.
Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and 180 o C for 300hrs. The AlAu 4 phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, AuSn Sn/Cu interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.Key words intermetallic compound, growth kinetics, Kirkendall void, au stud bump, activation energy.
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