We calculate the general Ko*fo and D O t t s o transition amplitude in the MIT bag model. The results are then discussed in comparison with the methods of insertions.
A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-μm and 1-μm-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously.
The processes involved in the fabrication of micron-dimension transistors and small-scale integrated circuits using only the technique of direct laser-writing by localized pyrolytic surface reactions are discussed. New experimental findings in the deposition of tungsten by silicon. surface reduction of tungsten hexafluoride and doped polysilicon are presented. The techniques used to fabricate laser beam-written n-MOSFET's are being extended to make unipolar JFET's and bipolar lateral pnp transistors.
Nickel and doped polysilicon lines can be written at speeds exceeding 1000 microns/sec using laser direct-write deposition. We explore the roles of gas pressure, composition, and laser power in determining writing speed and line morphology. The use of a surface layer of amorphous silicon provides optical absorption, thermal and electrical insulation which help to maintain high, relatively stable, surface temperature.Laser direct-write deposition is used to interconnect CMOS gate arrays by means of computer controlled laser pantography. Complex circuits, such as an array of five 16-stage shift registers and one 16-stage counter have been successfully fabricated and tested.
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