In this paper the selective patterning of poly [2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) and poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) based on reactive ion etching for device fabrication is examined. These polymers were anisotropically etched using RIE in a helium plasma. Results show clearly that RIE using helium gas is effective at etching the polymers from the selected areas without physical damage to the working device. Further results show the electroluminescence spectra of etched and unetched devices have almost identical emission spectra, when these devices are operated as an LED. The external quantum efficiency (EQE) for these photodetectors was calculated and EQE peak values reached at 580nm are consistent between etched devices and unetched controls. Test devices show no decrease in EQE performance from RIE.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.