This paper describes the development of a digital-based Beam Position System which was designed, developed, and adapted for the Tevatron during Collider Run II.
Fully automated semiconductor manufacturing, becoming a reality with the ramping of 300mm fabricators throughout the world, demands the integration of advanced process control (APC). APC is particularly critical for the lithography sector, whose performance correlates to yield and whose productivity often gates the line.We describe the implementation of a comprehensive lithography APC system at the IBM Center for Nanoelectronics, a 300mm manufacturing and development facility. The base lithography APC function encompasses closed-loop run-to-run control of exposure tool inputs to sustain the overlay and critical dimension outputs consistent with product specifications. Automation demands that no decision regarding the appropriate exposure tool run-time settings be left to human judgment. For each lot, the APC system provides optimum settings based on existing data derived from pertinent process streams. In the case where insufficient prior data exists, the APC system either invokes the appropriate combination of send ahead processing and/or pre-determined defaults.We give specific examples of the application of APC to stitched field and dose control, and quantify its technical benefits. Field matching < 0. 1 ppm and critical dimension control < 2.5% is achieved among multiple exposure tools and masks.
i. AbstractPhotocluster control is a key problem in advanced microelectronic manufacturing. As ground rules shrink, sustaining optimum overlay and critical dimension performance requires the frequent updating of tool settings dependent on product, product level, and statistically significant tool/process variation. The system we describe here relies on bi..directional SECSII interfaces to both exposure and metrology tools for upload/download of tool settings, measurement and logistics data. Exposure tool and process specific models are employed to predict dose, focus and overlay settings for each lot in queue at the exposure tool, based on prior lot or send-ahead wafer metrology data. The alignment and exposure of each lot is then executed under host control, following the automated download of the appropriate settings.
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