The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5µm cutoff MBE HgCdTe/Si detectors including pre-and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.
We present the first astronomical results from a 4K2 Hybrid Visible Silicon PIN array detector (HyViSI) read out with the Teledyne Scientific and Imaging SIDECAR ASIC. These results include observations of astronomical standards and photometric measurements using the 2.1m KPNO telescope. We also report results from a test program in the Rochester Imaging Detector Laboratory (RIDL), including: read noise, dark current, linearity, gain, well depth, quantum efficiency, and substrate voltage effects. Lastly, we highlight results from operation of the detector in window read out mode and discuss its potential role for focusing, image correction, and use as a telescope guide camera.
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