We report high-performance 0D−2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI 3 , Cs X FA X−1 PbI 3 , and FAPbI 3 ) quantum dots and MOCVD-grown bilayer MoS 2 . In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS 2 transport layer. With tunable wavelength lead halide PQDs, the 0D− 2D hybrid photodetector shows a high responsivity up to 10 7 AW −1 and high specific detectivity exceeding 10 13 Jones due to the difference in the built-in potential between PQDs and multilayer MoS 2 layers. This work proposes the possibility of fabricating highperformance photodetectors by hybridizing PQDs of various band gaps with 2D materials.
The 2D–0D hybrid photodetector, with its special structure, high sensitivity, and wavelength tunability, is reported as a promising candidate system for optoelectronic devices. As research on hybrid lead halide perovskite quantum dots (PQDs) has progressed, PQDs with high photoluminescence (PL) quantum yield and excellent absorption properties are increasingly applied in optoelectronic devices; however, PQD stability remains one of the biggest limitations on device performance. Here, it is reported that the properties and stability of the hybrid photodetectors are improved by surface passivation using the quaternary ammonium ligand (didodecyldimethylammonium bromide, DDAB). The average carrier lifetime of DDAB treated CsPbBr3 PQDs (DDAB‐capped PQDs) is longer than that of pristine CsPbBr3 PQDs by 6.68–14.88 ns. It is confirmed that the durability against water is reduced by only 25.8% at PL intensity and is preserved for more than 16 h. A 2D–0D hybrid photodetector is then fabricated by deposition of DDAB‐capped PQDs on the WSe2 field‐effect transistor device for a high‐performance photodetector. The WSe2/DDAB‐capped PQD hybrid photodetector exhibits an enhanced responsivity of 1.4 × 103 A W−1 and an improved detectivity of 3.1 × 1013 Jones under 40.0 µW cm−2 of a 405 nm laser.
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