We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.

Interdigitated photodetectors (IPDs) based on the twodimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also boosted by the escaped carriers from the 2DEG layer. Therefore, the utilization of a 2DEG layer in transferrable AlGaN/ GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.

The germanium-on-insulator (GOI) has recently emerged as a new platform for complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated circuits. Here we report on resonant-cavity-enhanced optical responses in Ge photodetectors on a GOI platform where conventional photodetection is difficult. A 0.16% tensile strain is introduced to the high-quality Ge active layer to extend the photodetection range to cover the entire range of telecommunication C- and L-bands (1530–1620 nm). A carefully designed vertical cavity is created utilizing the insulator layer and the deposited SiO2 layer to enhance the optical confinement and thus optical response near the direct-gap absorption edge. Experimental results show a responsivity peak at 1590 nm, confirming the resonant cavity effect. Theoretical analysis shows that the optical responsivity in the C- and L-bands is significantly enhanced. Thus, we have demonstrated a new type of Ge photodetector on a GOI platform for CMOS-compatible photonic integrated circuits for telecommunication applications.

Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at −1 V. A germanium-on-insulator (GOI) platform with a 200-mm wafer scale was realized for photodetector fabrication via direct wafer bonding and layer transfer techniques, followed by oxygen annealing in finance. A thin germanium-oxide (GeOx) layer was formed on the sidewall of photodetectors by ozone oxidation to suppress surface leakage current. The responsivity of the vertical p-i-n annealed GOI photodetectors was revealed to be 0.42 and 0.28 A/W at 1,500 and 1,550 nm at −1 V, respectively. The photodetector characteristics are investigated in comparison with photodetectors with SiO2 surface passivation. The surface leakage current is reduced by a factor of 10 for photodetectors via ozone oxidation. The 3dB bandwidth of 1.72 GHz at −1 V for GeOx surface-passivated photodetectors is enhanced by approximately 2 times compared to the one for SiO2 surface-passivated photodetectors. The 3dB bandwidth is theoretically expected to further enhance to ∼70 GHz with a 5 µm mesa diameter.

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density