High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO<sub>x</sub> surface passivation

Son, Bongkwon; Lin, Yiding; Lee, Kwang Hong; Wang, Yue; Wu, Shaoteng; Tan, Chuan Seng

doi:10.1364/oe.398199

Cited by 34 publications

(23 citation statements)

References 51 publications

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“…A/W at −1 V obtained by laser under 1310 nm, 1550 and 1630 nm are also shown comparison. The trend of spectral response is consistent with that measured by la Compared to the other Ge PDs reported previously [18,26,36], this GOI detector achie high responsivity in a wide spectral range of 1200~1650 nm. The responsivity spectrum GOI PD showed strong oscillation structures, indicating the effectiveness of the reson cavity structure to enhance the responsivity.…”

Section: Spectral Responsesupporting

confidence: 89%

“…Tremendous efforts have been made to enhance tensile strain in Ge, including the introduction of GeSn [ 19 , 20 ], microbridge structures [ 21 , 22 ], external stressors of SiN x [ 23 , 24 ], etc. To date, only a few Ge PD photoelectric detection ranges have been extended due to tensile strain on GOI substrates [ 25 , 26 , 27 , 28 , 29 ], and to the best of our knowledge, there is no report on the performance comparison of p-i-n detectors prepared on GOI with different oxide thickness.…”

Section: Introductionmentioning

confidence: 99%

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High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

et al. 2021

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In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.

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Section: Spectral Responsesupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

et al. 2021

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“…The increased Jsurf with the decreasing of the mesa diameter is attributed to the increase of the perimeter-toarea ratio. The dark current could be further reduced after optimizing the processes, such as more effective passivation treatment using amorphous Si or GeO2 as the passivation layer [23][24][25].…”

Section: A Dark Current Analysismentioning

confidence: 99%

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Zhou

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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Recently, high-performance GeSn photodiodes with external light illuminated on the device top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensors usually suffer from area limitations. Here, we report highperformance back-illuminated Ge0.92Sn0.08/Ge multiple-quantumwell (MQW) p-i-n photodiode on 300-mm silicon substrate, which was realized entirely by complementary metal-oxidesemiconductor (CMOS) compatible processes. A broadband photo response between 1,000-2,200 nm was observed, and the responsivity is 0.2850 and 0.0085A/W at 1,550 and 2,000 nm, respectively. A specific detectivity larger than 10 9 cm•Hz 1/2 /W was achieved between 1,050 and 1,900 nm, covering all the conventional telecommunication bands (O to U band). Furthermore, the influence of the anti-reflective layers also was studied in detail. The result shows the black Si surface enhances more photo current between 1,000-1,500 nm while the SiO2 layer (400-nm-thickness) increases more current beyond 1,500 nm. The 3-dB bandwidth was calculated to be up to 8 GHz for a mesa with a diameter of 20 μm at -2 V. Our experiments demonstrated the high-detectivity and high-speed back-illuminated GeSn/Ge MQW photodiode with the potential applications in image sensing systems operated in the short-wave infrared (SWIR) range.

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“…This leads to a compromise between the quantum efficiency (QE) and the photosensor response speed [ 11 ]. In the photo-sensing market, only silicon APS promises outstanding performance with high current amplification and high optical response [ 12 , 13 , 14 , 15 , 16 ]. This optical response can be extended to the visible spectrum.…”

Section: Introductionmentioning

confidence: 99%

Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications

Cheng

Wang

et al. 2022

Sensors

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This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-μW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.

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High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO_x surface passivation

Cited by 34 publications

References 51 publications

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications

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High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Cited by 34 publications

References 51 publications

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection

Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications

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High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO_x surface passivation

High-Performance Back-Illuminated Ge_0.92Sn_0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection