tion to the total inductance value of the spiral inductor, as they are in quadrature with the excitation currents. The effects of both the skin effects and the eddy currents on the overall inductance value were explained using the equivalent circuit model and validated by experimental data.
REFERENCES1. A.M. Niknejad and R.G. Meyer, Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's, IEEE J Solid-State Circ 33 (1998), 1470 -1481. 2. Y. Koutsoyannopoulos et al., A generic CAD model for arbitrary shaped and multilayer integrated inductors on silicon substrates, Proc ESSDERC, 1997, pp 320 -323. 3. J.R. Long and M.A. Copeland, The modeling, characterization and designed monolithic inductors for silicon RF ICs, IEEE J Solid-State ABSTRACT: An optical single sideband modulation with a cascaded semiconductor optical amplifier (SOA) is proposed and experimentally demonstrated. The single sideband-modulated signal is predicted using the phase predistortion technique in the RF input of the Mach-Zehnder modulator. The predicted results are compared with the measured data and good agreement is reported. ABSTRACT: A TLM model suitable to simulate the propagation of electromagnetic waves in Tellegen media is presented. The angle tilt between electromagnetic field vectors, the intrinsic impedances and the effective parameters of the medium are computed. The results for a monochromatic source are in very good agreement with the analytical solution.
The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
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