The two dimensional nature of graphene, with charge carriers confined within one atomic layer thickness, causes its electrical, optical, and sensing properties to be strongly influenced by the surrounding media and functionalization layers. In this study, the effect of catalytically active Pd nanoparticle (NP) functionalization and subsequent hydrogenation on the hall mobility and carrier density of chemical vapor deposition synthesized graphene has been investigated as a function of temperature. Prior to functionalization, the mobility decreased monotonically as the temperature was reduced from 298 to 10 K, indicating coulomb scattering as the dominant scattering mechanism as expected for bilayer graphene. Similar decreasing trend with temperature was also observed after 2 nm Pd deposition, however, hydrogenation of the Pd NP led to significant enhancement in mobility from ∼2250 to 3840 cm2/V s at room temperature, which further monotonically increased to 5280 cm2/V s at 10 K. We attribute this contrasting trend in temperature dependent mobility to a switch in the dominant scattering mechanism from coulomb to surface optical (SO) phonon scattering due to higher dielectric constant and polar nature of PdHx formed upon hydrogenation of the Pd NPs.
Quantum transport properties in monolayer graphene are sensitive to structural modifications. We find that the introduction of a hexagonal lattice of antidots has a wide impact on weak localization and Shubnikov-de Haas (SdH) oscillation of graphene. The antidot lattice reduces both phase coherence and intervalley scattering length. Remarkably, even with softened intervalley scattering, i.e., the phase-breaking time is shorter than intervalley scattering time, coherence between time reversed states remains adequate to retain weak localization, an offbeat and rarely reported occurrence. Whereas SdH oscillation is boosted by the antidot lattice, the amplitude of the SdH signal rises rapidly with the increasing antidot radius. But both effective mass and carrier density are reduced in a larger antidot lattice. A bandgap of ∼10 meV is opened. The antidot lattice is an effective dopant-free way to manipulate electronic properties in graphene.
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