Three-dimensional (3D) topological Dirac semimetals (TDSs) represent an unusual state of quantum matter that can be viewed as "3D graphene." In contrast to 2D Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. By investigating the electronic structure of Na3Bi with angle-resolved photoemission spectroscopy, we detected 3D Dirac fermions with linear dispersions along all momentum directions. Furthermore, we demonstrated the robustness of 3D Dirac fermions in Na3Bi against in situ surface doping. Our results establish Na3Bi as a model system for 3D TDSs, which can serve as an ideal platform for the systematic study of quantum phase transitions between rich topological quantum states.

Three-dimensional (3D) topological Dirac semimetals (TDSs) are a recently proposed state of quantum matter that have attracted increasing attention in physics and materials science. A 3D TDS is not only a bulk analogue of graphene; it also exhibits non-trivial topology in its electronic structure that shares similarities with topological insulators. Moreover, a TDS can potentially be driven into other exotic phases (such as Weyl semimetals, axion insulators and topological superconductors), making it a unique parent compound for the study of these states and the phase transitions between them. Here, by performing angle-resolved photoemission spectroscopy, we directly observe a pair of 3D Dirac fermions in Cd3As2, proving that it is a model 3D TDS. Compared with other 3D TDSs, for example, β-cristobalite BiO2 (ref. 3) and Na3Bi (refs 4, 5), Cd3As2 is stable and has much higher Fermi velocities. Furthermore, by in situ doping we have been able to tune its Fermi energy, making it a flexible platform for exploring exotic physical phenomena.

. This discovery not only confirms TaAs as a 3D TWS, but also provides an ideal platform for realizing exotic physical phenomena (for example, negative magnetoresistance, chiral magnetic e ects and the quantum anomalous Hall e ect) which may also lead to novel future applications.

The layered transition metal dichalcogenides (TMDs) MX 2 (M = Mo, W; X = S, Se, Te), a class of graphene-like two-dimensional materials, have attracted significant interest because they demonstrate quantum confinement at the single-layer limit 13 . As with graphene, these layered materials can be easily exfoliated mechanically to provide monolayers 3-7,14-16 and assume a hexagonal honeycomb structure in which the M and X atoms are located at alternating corners of the hexagons. However, unlike graphene, which has a gapless Dirac cone band structure, MX 2 has a rather large bandgap, making these materials more versatile as candidates for thin, flexible device applications and useful for a variety of other applications including lubrication 16 , catalysis 17 , transistors 18 and lithium-ion batteries 19 . Most interestingly, an indirect to direct bandgap transition in the monolayer limit has been predicted theoretically and supported experimentally by optical measurements [3][4][5]9,12 . Because of the direct bandgap, monolayer MX 2 is favourable for optoelectronic applications5 and field-effect transistors 15,16,18 . Furthermore, both the conduction and valence bands have two energy degenerate valleys at corners of the first Brillouin zone, making it viable to optically control the charge carriers in these valleys and suggesting the possibility of valley-based electronic and optoelectronic applications 3,6-8 .Despite these exciting developments, direct experimental verification of the novel band structure at the monolayer limit remains lacking. Furthermore, for many applications, it is vital to manufacture high-quality epitaxial films with controllable methods such as chemical vapour deposition (CVD) or molecular beam epitaxy (MBE) 20,21 .

Lanthanide-doped upconversion nanocrystals enable anti-Stokes emission with pump intensities several orders of magnitude lower than required by conventional nonlinear optical techniques. Their exceptional properties, namely large anti-Stokes shifts, sharp emission spectra and long excited-state lifetimes, have led to a diversity of applications. Here, we review upconversion nanocrystals from the perspective of fundamental concepts and examine the technical challenges in relation to emission colour tuning and luminescence enhancement. In particular, we highlight the advances in functionalization strategies that enable the broad utility of upconversion nanocrystals for multimodal imaging, cancer therapy, volumetric displays and photonics.

Molecular room‐temperature phosphorescent (RTP) materials with long‐lived excited states have attracted widespread attention in the fields of optical imaging, displays, and sensors. However, accessing ultralong RTP systems remains challenging and examples are still limited to date. Herein, a thermally activated delayed fluorescence (TADF)‐assisted energy transfer route for the enhancement of persistent luminescence with an RTP lifetime as high as 2 s, which is higher than that of most state‐of‐the‐art RTP materials, is proposed. The energy transfer donor and acceptor species are based on the TADF and RTP molecules, which can be self‐assembled into two‐component ionic salts via hydrogen‐bonding interactions. Both theoretical and experimental studies illustrate the occurrence of effective Förster resonance energy transfer (FRET) between donor and acceptor molecules with an energy transfer efficiency as high as 76%. Moreover, the potential for application of the donor–acceptor cocrystallized materials toward information security and personal identification systems is demonstrated, benefitting from their varied afterglow lifetimes and easy recognition in the darkness. Therefore, the work described in this study not only provides a TADF‐assisted FRET strategy toward the construction of ultralong RTP, but also yields hydrogen‐bonding‐assembled two‐component molecular crystals for potential encryption and anti‐counterfeiting applications.

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 1011 Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.