Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 °C, TFT devices showed an improved field-effect mobility of 1.73 cm2 V−1 s−1, a subthreshold slope (S) of 0.32 V dec−1, an on/off-current ratio greater than 1.3 × 107, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (Ns) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.

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The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm V s and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm V s and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.Index Terms-Amorphous InGaZnO (IGZO), sol-gel, ultraviolet (UV)-ozone.