Transparent organic upconversion devices are shown in a night-vision demonstration of a real object under near-infrared (NIR) illumination in the dark. An extraordinarily high current gain - reflecting the on-off switching effect - greater than 15 000 at a driving voltage of 3 V is demonstrated, indicating the high sensitivity to NIR light and potential of using the proposed upconverter in practical applications. A maximum luminance exceeding 1500 cd m(-2) at 7 V is achieved. Unlike previous studies, where 2D aperture projection is reported, the current study shows 3D images of real objects under NIR illumination in the dark.
Time-of-flight (TOF) measurements typically require a sample thickness of several
micrometers for determining the carrier mobility, thus rendering the applicability
inefficient and unreliable because the sample thicknesses are orders of magnitude
higher than those in real optoelectronic devices. Here, we use subphthalocyanine
(SubPc):C70 as a charge-generation layer (CGL) in the TOF measurement
and a commonly hole-transporting layer,
N,N’-diphenyl-N,N’-bis(1,1’-biphenyl)-4,4’-diamine
(NPB), as a standard material under test. When the NPB thickness is reduced from 2
to 0.3 μm and with a thin 10-nm CGL, the hole transient
signal still shows non-dispersive properties under various applied fields, and thus
the hole mobility is determined accordingly. Only 1-μm NPB is required
for determining the electron mobility by using the proposed CGL. Both the
thicknesses are the thinnest value reported to data. In addition, the flexibility of
fabrication process of small molecules can deposit the proposed CGL underneath and
atop the material under test. Therefore, this technique is applicable to
small-molecule and polymeric materials. We also propose a new approach to design the
TOF sample using an optical simulation. These results strongly demonstrate that the
proposed technique is valuable tool in determining the carrier mobility and may spur
additional research in this field.
Below are the supplementary notes on this article, 1. Prior to the publication of this paper, an earlier version was published as a proceedings paper of The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 14) held in Kyoto, Japan, in 2014. 59) In this article, more intensive discussion was given on the ideality factor of diodes and reduction in the energy loss due to the carrier recombination at higher V OC values in the organic heterojunction solar cell.
Figures 3(b) and 4, andTable I in this paper are reproduction of Figs. 2(b) and 3, and Table I in Ref. 59, respectively.
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