One of the most interesting structures
of organic photodetectors
(OPDs) is the bulk heterojunction (BHJ), which can be achieved by
mixing electron donors and electron acceptors in a suitable solvent
and then spin-coating. BHJs have proven to be a very useful method
to overcome the short diffusion length of organic semiconductor excitons.
However, this structure enhances disorder and hinders the collection
of photogenerated carriers. Therefore, it is very important to prepare
OPDs with this structure. In this paper, we show how to use conjugate
polymer donor poly(3-hexylthiophene) (P3HT) and fullerene derivative
acceptor 6,6-phenyl C61-butyric acid methyl ester (PC61BM) to form
a binary BHJ active layer by spin-coating to improve the performance
and detector wavelength of a ZnO ultraviolet (UV) photodetector (PD).
Compared with the ZnO UV PD, the responsivity of the OPD can reach
0.58 A W–1, which is increased by about 7.14 times.
Furthermore, the OPD shows improved absorption, high photocurrent
to dark current ratio (1.63 × 104), and excellent
detection capability (3.67 × 1012 Jones). The preparation
of a new OPD by this work shows strong performance and provides a
new idea for the research of OPD. Therefore, it is very important
to design and manufacture ZnO UV PD to form a BHJ OPD with organic
polymers P3HT:PC61BM.