A GaN/AlGaN-based ultraviolet light-emitting diode (LED) structure with an embedded porous-AlGaN reflector was fabricated by a doping-selective electrochemical (EC) wet-etching process. The n+-AlGaN/undoped-AlGaN (u-AlGaN) stack structures with different Al contents were transformed into porous-AlGaN/u-AlGaN stack structures that acted as the embedded distributed Bragg reflectors (DBRs). The porosity of the EC-treated AlGaN layer was increased by decreasing the Al content in the n+-AlGaN layer. The reflectivity of the porous-AlGaN DBR structure was measured to be 90% at 379.3 nm with a 37.2 nm stopband width. The photoluminescence emission intensity of the DBR-LED was enhanced by forming the embedded porous-AlGaN DBR structure.
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