The design of a low-voltage low-power fourth-order single-bit continuous-time Delta-Sigma modulator is presented in this paper for audio applications. The modulator employs an input-feedforward topology in order to reduce internal signal swings, thus relaxes the linearity and slew rate requirements on amplifiers leading to low-voltage operation and low-power consumption. The energy efficiency is further improved by embedding the summation of feedforward paths into the quantizer. For low-voltage operation, a gain-enhanced fully-differential amplifier and a body-driven rail-to-rail input CMFB circuit are developed. The modulator, implemented in a 0.13-m standard CMOS technology with a core area of 0.11 mm , achieves an 82-dB dynamic range (DR), and a 79.1-dB peak signal-to-noise and distortion ratio (SNDR) over a 20-kHz signal bandwidth. The power consumption of the modulator is 28.6 W under a 0.6-V supply voltage. The achieved performance make it one of the best among state-of-the-art sub-1-V modulators in terms of two widely used figures of merit.
Detailed device-level models of the insulated-gate-bipolar-transistor (IGBT) and diode are essential for power converter design evaluation for providing insight into circuit and device behaviours, as well as to shorten the design cycle and reduce costs. In this study, the non-linear behavioural models of IGBT and power diode are utilised for emulating the modular multilevel converter (MMC) on the field programmable gate array. For digital hardware-in-the-loop (HIL) emulation, these timedomain continuous models are discretised and linearised prior to being designed into the corresponding hardware modules using the hardware description language VHDL that features a fully paralleled and pipelined implementation. A circuit partitioning approach is adopted according to the MMC structure to enhance computation efficiency and then, detailed information from the system-level performance to the specific features of individual switches is available. HIL emulation and the subsequent comparison with results from the commercial off-line simulation tools prove that the complex IGBT and diode models can be involved in the efficient simulation of large-scale power converters. 2 Non-linear behavioural device model 2.1 Power diode non-linear behavioural model The power diode is simplified with only static features and the reverse recovery dynamics preserved while other negligible components in the original full behavioural model [24] are omitted, as shown in Fig. 1a. 2.1.1 Model description: The diode static characteristics represented by the symbol NLD reflects an exponential relationship IET Power Electron.
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