Achieving dense off-chip interconnection with satisfactory electrical performance is emerging as a major challenge in advanced system engineering. Graphene nanoribbons (GNRs) have been recently proposed as one of the potential candidate materials for both transistors and interconnect. In addition, development is still underway for alternative materials and processes for high aspect ratio (AR) contacts. Studding the effect of varying aspect ratio on relative stability of graphene nanoribbon interconnects is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for GNR interconnects is investigated. In this analysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the aspect ratio has been acquired. It is shown that, with increasing the aspect ratio of each ribbon, MLGNR interconnects become more unstable.
The remarkable properties of graphene nanoribbons (GNRs) make them attractive for nano-scale devices applications, especially for transistor and interconnect. Furthermore, for reduction interconnects signal delay, low dielectric constant materials are being introduced to replace conventional dielectrics in next generation IC technologies. With these regards, studding the effect of varying dielectric constant (ɛr) on relative stability of graphene nanoribbons interconnect is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for graphene nanoribbon interconnects is investigated. In this analysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the dielectric constant has been acquired. It is shown that, increasing the dielectric constant of each ribbon, MLGNR interconnects become more stable.
Increasing the voltage gain by means of Z-source network will provide some features such as low voltage stress of semiconductor devices, low duty cycle of the switch and low reverse recovery problem of output diode that leads to improve the converter performance and efficiency. The proposed converter in this paper employs a Z-source network with coupled inductors integrated with flyback converter to make it appropriate for high step-up applications. One magnetic element is used in this converter, which is its main advantage over previously introduced Z-source converters. Steady state analysis and operation principles of the proposed converter in continuous conduction mode that leads to low current ripple, and low conductive losses for semiconductor devices due to decreasing the RMS currents are presented. In order to verify the theoretical analysis, experimental results of a prototype are provided. This converter's high voltage conversion ratio will result in 300 V output from 20 V input voltage source for 100 W output power.
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