Czochralski growth of large metallic alloy single crystals of Al 13 Co 4 and Al 13 Fe 4 from Al-rich solutions has been demonstrated for the first time. A detailed description of all decisive steps of the growth procedure is given with particular emphasis to seeding from a native phase as well as spontaneous nucleation if no seed crystal from a preceding experiment is available. Czochralski growth in a high-temperature solution system requires much lower pulling rates compared to typical growth experiments from the melt and a timedependent temperature program to compensate the change of the liquidus temperature that results from the permanently increasing Al content of the liquid phase. With a given amount of the initial melt, the size of the Al 13 Co 4 crystals is limited by the rather narrow temperature range of the Al 13 Co 4 primary crystallization window, followed by Al 9 Co 2 phase crystallization. In the Al-Fe system, despite the huge temperature range of equilibrium between Al 13 Fe 4 and its Al-rich melt, Czochralski growth of Al 13 Fe 4 is restricted to higher temperatures due to the limited solubility that leads to mother liquid inclusions even at extremely low pulling rates. Dedicated to Prof. Ladislav Bohatý on the occasion of his 60th birthday

We present a study of the anisotropic transport properties ͑electrical resistivity, thermoelectric power, Hall coefficient, and thermal conductivity͒ of a single-crystalline Al 80 Cr 15 Fe 5 complex metallic alloy that is an excellent approximant to the decagonal quasicrystal with six atomic layers in one periodic unit. Temperaturedependent electrical resistivity along the b and c crystalline directions shows a nonmetallic behavior with a broad maximum, whereas it shows a metallic positive temperature coefficient along the a direction perpendicular to the ͑b , c͒ atomic planes. Ab initio calculations of the electronic density of states reveal that the nonmetallic transport occurs in the presence of a high density of charge carriers. The very different temperature-dependent electrical resistivities along the three crystalline directions can all be treated within the same physical model of slow charge carriers due to weak dispersion of the electronic bands, where the increased electron-phonon scattering upon raising the temperature induces transition from dominant Boltzmann ͑metallic͒ to dominant non-Boltzmann ͑insulatinglike͒ regime. The temperature dependence of the resistivity is governed predominantly by the temperature dependence of the electronic diffusion constant D and the transition has no resemblance to the Anderson-type metal-to-insulator transition based on the gradual electron localization. Structural considerations of the Al 80 Cr 15 Fe 5 phase show that the anisotropy of the transport properties is a consequence of anisotropic atomic order on the scale of nearest-neighbor atoms, suggesting that the role of quasiperiodicity in the anisotropic transport of decagonal quasicrystals is marginal. We also present a relaxed version of the Al 4 ͑Cr, Fe͒ structural model by Deng et al.