Electroluminescence light-emitting diodes enabled by hybridising colloidal quantum dots is an emerging technology for large-area and foldable ambient lighting. We summerise state-of-the-art scientific challenges and prospect their future development.

Indoor photovoltaics (IPVs) have attracted considerable interest for their potential to power small and portable electronics and photonic devices. The recent advancemes in circuit design and device optimizations has led to the power required to operate electronics for the internet of things (IoT), such as distributed sensors, remote actuators, and communication devices, being remarkably reduced. Therefore, various types of sensors and a large number of nodes can be wireless or even batteryless powered by IPVs. In this review, we provide a comprehensive overview of the recent developments in IPVs. We primarily focus on third‐generation solution‐processed solar cell technologies, which include organic solar cells, dye‐sensitized solar cells, perovskite solar cells, and newly developed colloidal quantum dot indoor solar cells. Besides, the device design principles are also discussed in relation to the unique characteristics of indoor lighting conditions. Challenges and prospects for the development of IPV are also summarized, which, hopefully, can lead to a better understanding of future IPV design as well as performance enhancement.

Indoor photovoltaics have attracted considerable attention due to their great potential for powering low‐power electronics and photonic devices under ambient light. Bo Hou, Gehan A. J. Amaratunga and co‐authors (DOI: 10.1002/inf2.12180) provide an overview and prospect of the recent advances in various indoor photovoltaics. image

Photodetectors based on two‐dimensional (2D) van der Waals heterostructures (vdWHs) have demonstrated great potential in modern nanotechnologies across a wide range of applications. However, due to the severe interface recombination of the photogenerated electron–hole pairs and various absorption edges of constituent layers, they would suffer from low carrier collection efficiency, and the spectral response range of each constituent layer is indistinguishable. Herein, tellurium (Te) nanoflakes with broadband photoresponse are synthesized to construct type‐I InSe/Te vdWHs photodetector, which exhibits an ultralow reverse dark current of 3 × 10−14 A and an ultrahigh current rectification ratio of 108. Moreover, considerable photovoltaic effect of the heterostructure device is observed under illumination, attaining a light on/off ratio of up to 105, a high specific detectivity of 1.77 × 1011 Jones, and a fast response time of 320 µs. Based on type‐I band alignment, the Te layer can collect the photogenerated holes from the InSe layer to suppress the recombination of photogenerated carriers. More importantly, the spectral response of the InSe/Te heterostructure photodetector can be selectively modulated by the InSe layer. This work demonstrates that band alignment engineering of 2D vdWHs holds great potential for developing high‐performance self‐powered photodetectors.