Ultrathin silicon wafers are key components of wearable electronic devices and flexible
electronics. Defects produced during the preparation process of
ultrathin silicon wafers have a great influence on the electronic
performance. A high-precision, nondestructive, and rapid damage
detection method is urgently needed. IR digital holography has the
advantage of being insensitive to visible light and environmental
interference. In addition, micro-holography can achieve micro-target
scaling with large range scaling. An ultrathin silicon wafer defect
detection method of IR micro-digital holography is proposed in this
paper for what we believe is the first time. Using the proposed defect
detection method based on holography, the detection accuracy reached
the submicron level.
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