We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have been determined as functions of height, z, source gas mixing ratio, total gas pressure, p, and input power, P. Optical emission spectroscopy has been used to investigate, with respect to the same variables, the relative number densities of electronically excited species, namely, H atoms, CH, C2, CN, and NH radicals and triplet N2 molecules. The measurements have been reproduced and rationalized from first-principles by 2-D (r, z) coupled kinetic and transport modeling, and comparison between experiment and simulation has afforded a detailed understanding of C/N/H plasma-chemical reactivity and variations with process conditions and with location within the reactor. The experimentally validated simulations have been extended to much lower N2 input fractions and higher microwave powers than were probed experimentally, providing predictions for the gas-phase chemistry adjacent to the diamond surface and its variation across a wide range of conditions employed in practical diamond-growing CVD processes. The strongly bound N2 molecule is very resistant to dissociation at the input MW powers and pressures prevailing in typical diamond CVD reactors, but its chemical reactivity is boosted through energy pooling in its lowest-lying (metastable) triplet state and subsequent reactions with H atoms. For a CH4 input mole fraction of 4%, with N2 present at 1–6000 ppm, at pressure p = 150 Torr, and with applied microwave power P = 1.5 kW, the near-substrate gas-phase N atom concentration, [N]ns, scales linearly with the N2 input mole fraction and exceeds the concentrations [NH]ns, [NH2]ns, and [CN]ns of other reactive nitrogen-containing species by up to an order of magnitude. The ratio [N]ns/[CH3]ns scales proportionally with (but is 102–103 times smaller than) the ratio of the N2 to CH4 input mole fractions for the given values of p and P, but [N]ns/[CN]ns decreases (and thus the potential importance of CN in contributing to N-doped diamond growth increases) as p and P increase. Possible insights regarding the well-documented effects of trace N2 additions on the growth rates and morphologies of diamond films formed by CVD using MW-activated CH4/H2 gas mixtures are briefly considered.

We report a combined experimental/modeling study of microwave activated dilute N2/H2 and NH3/H2 plasmas as a precursor to diagnosis of the CH4/N2/H2 plasmas used for the chemical vapor deposition (CVD) of N-doped diamond. Absolute column densities of H(n = 2) atoms and NH(X(3)Σ(-), v = 0) radicals have been determined by cavity ring down spectroscopy, as a function of height (z) above a molybdenum substrate and of the plasma process conditions, i.e., total gas pressure p, input power P, and the nitrogen/hydrogen atom ratio in the source gas. Optical emission spectroscopy has been used to investigate variations in the relative number densities of H(n = 3) atoms, NH(A(3)Π) radicals, and N2(C(3)Πu) molecules as functions of the same process conditions. These experimental data are complemented by 2-D (r, z) coupled kinetic and transport modeling for the same process conditions, which consider variations in both the overall chemistry and plasma parameters, including the electron (Te) and gas (T) temperatures, the electron density (ne), and the plasma power density (Q). Comparisons between experiment and theory allow refinement of prior understanding of N/H plasma-chemical reactivity, and its variation with process conditions and with location within the CVD reactor, and serve to highlight the essential role of metastable N2(A(3)Σ(+)u) molecules (formed by electron impact excitation) and their hitherto underappreciated reactivity with H atoms, in converting N2 process gas into reactive NHx (x = 0-3) radical species.

A microwave (MW) activated hydrogen plasma operating under conditions relevant to contemporary diamond chemical vapor deposition reactors has been investigated using a combination of experiment and self-consistent 2-D modeling. The experimental study returns spatially and wavelength resolved optical emission spectra of the d → a (Fulcher), G → B, and e → a emissions of molecular hydrogen and of the Balmer-α emission of atomic hydrogen as functions of pressure, applied MW power, and substrate diameter. The modeling contains specific blocks devoted to calculating (i) the MW electromagnetic fields (using Maxwell's equations) self-consistently with (ii) the plasma chemistry and electron kinetics, (iii) heat and species transfer, and (iv) gas−surface interactions. Comparing the experimental and model outputs allows characterization of the dominant plasma (and plasma emission) generation mechanisms, identifies important coupling reactions between hydrogen atoms and molecules (e.g., the quenching of H(n > 2) atoms and electronically excited H 2 molecules (H 2 *) by the alternate ground-state species and H 3 + ion formation by the associative ionization reaction of H(n = 2) atoms with H 2 ), and illustrates how spatially resolved H 2 * (and H α ) emission measurements offer a detailed and sensitive probe of the hyperthermal component of the electron energy distribution function.

The laser induced fluorescence spectrum of the A (1)A(")-X (1)A(') transition of CFBr is presented, with selected bands recorded at sub-Doppler resolution, allowing the rotational constants to be fully determined. Analysis of dispersed fluorescence spectra and the pattern of (79)Br/(81)Br isotope splittings indicate that the origin must be shifted from previous assignments in the literature to 23 271.0 cm(-1). This implies that only the lowest four vibrational levels in the A state have significant quantum yields for fluorescence, with all other levels strongly predissociated. Comparison with photofragment measurements implies that the A state is metastable, with a barrier to dissociation of approximately 1000 cm(-1).

We report a combined experimental/modeling study of optical emission from the A 2 Δ, B 2 Σ − , and C 2 Σ + states of the CH radical in microwave (MW) activated CH 4 /H 2 gas mixtures operating under a range of conditions relevant to the chemical vapor deposition of diamond. The experiment involves spatially and wavelength resolved imaging of the CH(C → X), CH(B → X), and CH(A → X) emissions at different total pressures, MW powers, C/H ratios in the source gas, and substrate diameters. The results are interpreted by extending an existing 2D (r, z) plasma model to include not just electron impact excitation but also chemiluminescent (CL) bimolecular reactions as sources of the observed CH emissions. Three possible CL reactions (of H atoms with CH 2 (a 1 A 1 ) and CH 2 (X 3 B 1 ) radicals and of C( 1 D) atoms with H 2 ) are identified as plausible sources of electronically excited CH radicals (particularly of the lowest energy CH(A) state radicals). Each or all of these could contribute to the observed emissions and, collectively, are deduced to be the major source of the CH(A) emissions observed at the high temperatures (T gas ∼ 3000 K) and pressures (75 ≤ p ≤ 275 Torr) explored in the present study. We suggest that such CL contributions are likely to be commonplace in such high pressure, high temperature plasma environments and highlight some of the risks associated with using relative emission intensities as an indicator of the electron characteristics in such plasmas.