Sensors for high rate charge particle tracking have to withstand the harsh radiation doses deposited by the particles to be sensed. This holds particularly for the novel CMOS Monolithic Active Pixel Sensors, which are considered a promising sensor technology for future vertex detectors due to their very light material budget and excellent spatial resolution. To resist the radiation doses expected close to the interaction regions of heavy-ion experiments, the sensors have to be hardened against radiation doses, which exceed the native tolerance of CMOS technology significantly. In this thesis, the results of non-ionizing radiation hardness studies at the IKF on sensor prototypes developed at the IPHC in Strasbourg are presented. Our results demonstrate that the CMOS sensors evaluated in the context of this thesis can withstand non-ionizing radiation of up to 5×10^14 neq/cm^2. This hardness qualifies them as promising candidates for use in future vertex detectors.
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