We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a point-like excitation are monitored. Carrier diffusion coefficients of 11,000 and 5,500 squared centimeters per second are measured in epitaxial graphene and reduced graphene oxide samples, respectively, with a carrier temperature on the order of 3,600 K. The demonstrated optical techniques can be used for non-contact and non-invasive in-situ detection of transport properties of graphene.Comment: 5 pages, 3 figure
Efficient exciton dissociation is crucial to obtaining high photonic response in photodetectors. This work explores implementation of a novel exciton dissociation mechanism through heterojunctions self-assembled at the graphene/MWCNT (multiwall carbon nanotube) interfaces in graphene/MWCNT nanohybrids. Significantly enhanced near-infrared photoresponsivity by nearly an order of magnitude has been achieved on the graphene/MWCNT nanohybrids as compared to the best achieved so far on carbon nanotube (CNT) only infrared (IR) detectors. This leads to a high detectivity up to 1.5 × 10(7) cm·Hz(1/2)·W(-1) in the graphene/MWCNT nanohybrid, which represents a 500% improvement over the best D* achieved on MWCNT film IR detectors and may be further improved with optimization on the interfacial heterojunctions. This approach of the self-assembly of graphene/CNT nanohybrids provides a pathway toward high-performance and low-cost carbon nanostructure IR detectors.
The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields.
We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.
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