The thermoelectric inhomogeneity as a function of position along wires is one the significant uncertainty of measurement using thermocouples. Here we report development of an electrical annealing system for thermoelectric inhomogeneity treatment. Two inhomogeneous type-S thermocouples, which had the inhomogeneity greater than 0.04%emf, are successfully recovered using the system. An improvement on thermocouple performance as large as 0.28 °C (at temperature of 1000 °C) can be obtained using the system. This article provides detailed information and may help the reader to obtain a quick grasp about the system.
Self-running Ga droplets on GaAs (001) surfaces are repeatedly and reliably formed in a molecular beam epitaxial (MBE) chamber despite the lack of real-time imaging capability of a low-energy electron microscope (LEEM) which has so far dominated the syntheses and studies of the running droplets phenomenon. Key to repeatability is the observation and registration of an appropriate reference point upon which subsequent sublimation conditions are based. The reference point is established using reflection high-energy electron diffraction (RHEED), not the noncongruent temperature used in LEEM where temperature discrepancies up to 25°C against MBE is measured. Our approach removes instrumental barriers to the observation and control of this complex dynamical system and may extend the usefulness of many droplet-related processes.
The APMP bilateral key comparison APMP.T-K3.4 was initiated on the request from RCM-LIPI (Indonesia) to link their national standards to the average reference values (ARVs) of the CCT-K3. Korea Research Institute of Standards and Science (KRISS, Republic of Korea) provided the linkage to the CCT-K3 for temperatures ranging from -38.8344 °C to 419.527 °C. In the APMP.T-K3.4, two standard platinum resistance thermometers (SPRTs) were chosen as the transfer instruments and were calibrated at the ITS-90 fixed-points in the comparison range. The fixed-points in this comparison included Zn freezing point (419.527 °C), Sn freezing point (231.928 °C), In freezing point (156.5985 °C), Ga melting point (29.7646 °C), and Hg triple point (-38.8344 °C). The comparison was carried out in a participant-pilot-participant sequence where KRISS served as the pilot. The linkage was based on the fixed-point resistance ratios of RCM-LIPI relative to the ARVs of the CCT-K3 via the difference between the fixed-point resistance ratios of KRISS and the ARVs of the CCT-K3. The temperature differences between the national standards of RCM-LIPI and the ARVs of the CCT-K3 were within the evaluated comparison uncertainties of the ATPM.T-K3.4. This report provides detailed information on the comparison results, linkage mechanism, and the Degree of Equivalence of the RCM-LIPI relative to the institutes having participated in the CCT-K3.
Main text
To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/.
The final report has been peer-reviewed and approved for publication by the CCT, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).
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