Checklist-based screening instruments have a role in the assessment of mentally disordered and criminal offenders, but their value for screening for vulnerability to violent extremism remains moot. This study examined the effectiveness of using the Identifying Vulnerable People (IVP) guidance to identify serious violence in persons convicted or killed in the process of committing a violent-extremist offense using open-source intelligence (i.e., publicly available archival material). Of 182 specific participants identified, specific offense data was available for 157 individuals. Blind kappas for individual items of the 16-item IVP guidance ranged from 0.67 to 1.00. IVP guidance was more reliable when applied to conventional terrorist groups, but missing information significantly reduced reliability. Weighting items thought more central to violent extremism (death rhetoric, extremist group membership, contact with recruiters, advanced paramilitary training, overseas combat) did not improve reliability or prediction. Although the total unweighted IVP score predicted some acts of violence, test effectiveness statistics suggested IVP guidance was most effective as a negative predictor of grave outcomes, and best applicable to conventional ideological violent extremists who came to this position through typical “terrorist” trajectories. Results suggest the IVP guidance has potential value as an initial screening tool, but must be applied appropriately to persons of interest, is strongly dependent on the integrity and completeness of information, and does not supercede human-led risk assessment of the case and acute risk states.
We demonstrate that two distinctly different in-plane epitaxial states of c-axis oriented YBa2Cu3O7−δ (YBCO) films on (100) yttria-stabilized ZrO2 (YSZ) single-crystal substrates can be produced independently, namely, YBCO [100]//YSZ [100] or YBCO [100]//YSZ [110]. Both in-plane epitaxial relationships can be modeled by matching YBCO and YSZ oxygen sublattices at the film-substrate interface. High critical current densities (Jc), ∼5×105–1×106 A/cm2 at 77 K, are achieved when ≳90 vol % of either orientation is present. Jc can be degraded nearly four orders of magnitude in films with mixed orientation.
We have deposited YBa2Cu3O7−δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450–620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.
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