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This work discusses measurement of thermal conductivity (k) of films using a scanning hot probe method in the 3ω mode and investigates the calibration of thermal contact parameters, specifically the thermal contact resistance (R(th)C) and thermal exchange radius (b) using reference samples with different thermal conductivities. R(th)C and b were found to have constant values (with b = 2.8 ± 0.3 μm and R(th)C = 44,927 ± 7820 K W(-1)) for samples with thermal conductivity values ranging from 0.36 W K(-1) m(-1) to 1.1 W K(-1) m(-1). An independent strategy for the calibration of contact parameters was developed and validated for samples in this range of thermal conductivity, using a reference sample with a previously measured Seebeck coefficient and thermal conductivity. The results were found to agree with the calibration performed using multiple samples of known thermal conductivity between 0.36 and 1.1 W K(-1) m(-1). However, for samples in the range between 16.2 W K(-1) m(-1) and 53.7 W K(-1) m(-1), calibration experiments showed the contact parameters to have considerably different values: R(th)C = 40,191 ± 1532 K W(-1) and b = 428 ± 24 nm. Finally, this work demonstrates that using these calibration procedures, measurements of both highly conductive and thermally insulating films on substrates can be performed, as the measured values obtained were within 1-20% (for low k) and 5-31% (for high k) of independent measurements and/or literature reports. Thermal conductivity results are presented for a SiGe film on a glass substrate, Te film on a glass substrate, polymer films (doped with Fe nano-particles and undoped) on a glass substrate, and Au film on a Si substrate.

Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10−2 and (10.4 ± 2.6)·10−2, respectively.