A top-imaged single-layer resist (TISLR) process has been devised to make use of the different diffusion rates of organometallic compounds into the exposed and unexposed regions of a resist, so that latent patterns can be subsequently delineated in an oxygen plasma. The distinct chemical or physical properties of a resist in the exposed and unexposed areas bring about the different diffusion rates of the organometallic reagent. Notwithstanding that the bulk diffusion is easily achievable, a more versatile and high resolution yielding process can be realized provided that the diffusion is confined to the top-surface layer alone. Both positive- and negative-tone images have been realized with conventional photoresists according to the TISLR scheme. A few examples will be discussed to illustrate its features.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.