Articles you may be interested inDissolving, trapping and detrapping mechanisms of hydrogen in bcc and fcc transition metals AIP Advances 3, 012118 (2013); 10.1063/1.4789547 Atomic diffusion bonding of wafers with thin nanocrystalline metal films J. Vac. Sci. Technol. B 28, 706 (2010); 10.1116/1.3437515 Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates
Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-dopedCzochralski silicon J. Appl. Phys. 96, 3031 (2004); 10.1063/1.1777804Complementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon A model for the precipitation of oxygen and associated dislocation loops in Czochralski-grown silicon is presented. Beginning with kinetic rate equations describing the growth and dissolution of oxide precipitates, a reduced model based on the moments of the precipitate size distribution is developed and validated against experimental data. The complete model source code is provided. Comparisons with the full, rate equation-based model show that the reduced version is comparably accurate, while requiring significantly less computational power. The formation of dislocation loops due to silicon interstitial ejection during precipitate growth is modeled using a simple, moment-based approach. An analysis of the sensitivity of the oxygen model to parameters is included. V C 2013 AIP Publishing LLC. [http://dx.
Linear Brownian motors utilize relatively weak electric fields to bias the diffusion of particles in a microfluidic channel thereby harnessing Brownian motion to facilitate particle transport. We present a custom simulator for such a system and use it to optimize transport by modifying the electrode configuration and rectification scheme. With insight gained from simulation, we are able to identify features of potential energy profiles conducive to faster transport and suggest configurations to achieve them.
Ab-initio calculations of dislocation and {311} defect structures in silicon were performed in order to investigate the formation energies as functions of geometry, including the effects of applied strain, with a simple model. Predictions were made concerning the size at which a {311} defect becomes less favorable than a dislocation loop, and it was shown that this is affected by applied strain.
A model for the precipitation of oxygen and associated dislocation loops in Czochralski-grown silicon is presented. Beginning with kinetic rate equations describing the growth and dissolution of oxide precipitates, a reduced model based on the moments of the precipitate size distribution is developed and validated against experimental data. Comparisons with the full, rate equation-based model show that the reduced version is comparably accurate while requiring significantly less computational power. The formation of dislocation loops due to silicon interstitial ejection during precipitate growth is modeled using a simple, moment-based approach.
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