Bismuth (Bi)‐doped glasses with broadband near‐infrared (NIR) emission have been drawing increasing interest due to their potential applications in tunable fiber lasers and broadband optical amplifiers. Yet, the implementation of highly efficient and ultra‐broadband Bi NIR emission covering the whole telecommunication window remains a daunting challenge. Here, via a metal reduction strategy to simultaneously create a chemically reductive environment during glass melting and enhance the local network rigidity, a super broadband (FWHM ≈ 600 nm) NIR emission covering the entire telecommunications window with greatly enhanced intensity was achieved in Bi‐doped germanate glasses. More importantly, due to the excellent thermal stability, the super broadband Bi NIR emission can be well retained after the glass was drawn into an optical fiber. Furthermore, the transmission loss of 0.066 dB/cm at 1310 nm and an obvious broadband amplified spontaneous emission spectrum spanning a range of 1000–1600 nm were observed in this fiber. This work can strengthen our comprehension of the complicated Bi NIR luminescence behaviors and offer a feasible and universal way to fabricate tunable fiber lasers and broadband optical amplifiers based on Bi‐doped multicomponent glasses.
CsPbIBr2 has shown great potential in the optoelectronics field due to its well‐balanced relationship between bandgap and durability among all‐inorganic perovskites materials. However, the CsPbIBr2 thin films prepared by the traditional one‐step spin coating method suffer from unsatisfactory morphology, poor crystallinity, and high defect density, which lead to the degradation of device performance. Herein, a simple preannealing method is used to form unstable transition films which are then annealed at high temperature to obtain CsPbIBr2 perovskite films with uniform morphology, free pinholes, and strong crystallinity. The performance of the device can be effectively improved due to the reduction of defects and the optimization of the contact between functional layers. Therefore, the power conversion efficiency of 9.6% is obtained, which is nearly 100% improvement compared with that of the control device.
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