Hybrid graphene/quantum dots photodetectors have been obtained up to 10^9 A/W ultrahigh responsivity, but the major challenge of these architectures is the slow photoresponse speed, especially the delay time of these configurations is mostly on the second time scale. Herein, we propose a hybrid photodetector of graphene/TiO2 films /inorganic PbS quantum dots, which bridge the gap between high sensitivity and fast response time at visible band detection. Under 635 nm light illumination, the device shows a high responsivity of 1.2 *10^4 A/W, a fast decay time of 35 ms, and a specific detectivity of 1.5 * 10^12 Jones at 1 V bias. The high responsivity is ascribed to the photogating effect, and the major findings hold great promise for application in optoelectronics.
Advanced four‐mask process a‐Si TFT array manufacturing method and good TFT stability is presented in this paper. We used an optimum half‐tone mask transmittance and half‐tone photoresist for the four‐mask process architecture. Data line open and photoresist peeling issues occurred in G8.6 TFT‐LCDs and solutions will be shown.
Advanced four‐mask process a‐Si TFT array manufacturing method and good TFT stability is presented in this paper. We used an optimum half‐tone mask transmittance and half‐tone photoresist for the four‐mask process architecture. Data line open and photoresist peeling issues occurred in G8.6 TFT‐LCDs and solutions will be shown.
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