Metallic nanoparticles containing 3d elements are generally susceptible to oxidation leading to a deterioration of desired properties. Here, the oxidation behavior of differently sized FePt nanoparticles is experimentally studied by x-ray photoelectron spectroscopy (XPS) and compared to a FePt reference film. For all as-prepared metallic samples the common features are the formation of Fe(3+), becoming detectable for exposures to pure oxygen above 10(6) langmuir whereas under identical conditions the Pt(0) signal is conserved. Most notably, these features are independent of particle size. Annealing at 650 degrees C, however, affects small and large FePt particles differently. While large particles as well as the reference film show a 100-1000 times enhanced resistance against oxidation, small FePt particles (diameter 5 nm) exhibit no such enhancement due to the thermal treatment. Additional XPS intensity analysis in combination with model calculations leads to an explanation of this observation in terms of Pt segregating to the surface. In large particles and films the thickness of the resulting Pt layer is sufficient to strongly impede oxidation, while in small particles this layer is incomplete and no longer provides protection against oxidation.

We introduce a simple and effective model of a commercial magnetic thin-film sensor for magnetic force microscopy (MFM), and we test the model employing buried magnetic dipoles. The model can be solved analytically in the half-space in front of the sensor tip, leading to a simple 1/R dependence of the magnetic stray field projected to the symmetry axis. The model resolves the earlier issue as to why the magnetic sensors cannot be described reasonably by a restricted multipole expansion as in the point pole approximation: the point pole model must be extended to incorporate a 'lower-order' pole, which we term 'pseudo-pole'. The near-field dependence (∝ R −1 ) turns into the well-known and frequently used dipole behavior (∝ R −3 ) if the separation, R, exceeds the height of the sensor. Using magnetic nanoparticles (average diameter 18 nm) embedded in a SiO cover as dipolar point probes, we show that the force gradient-distance curves and magnetic images fit almost perfectly to the proposed model. The easy axis of magnetization of single nanoparticles is successfully deduced from these magnetic images. Our model paves the way for quantitative MFM, at least if the sensor and the sample are independent.

We show that Co2FeAl0.5Si0.5 film deposited on Si(111) has a single crystal structure and twin related epitaxial relationship with the substrate. Sub-nanometer electron energy loss spectroscopy shows that in a narrow interface region there is a mutual inter-diffusion dominated by Si and Co. Atomic resolution aberration-corrected scanning transmission electron microscopy reveals that the film has B2 ordering. The film lattice structure is unaltered even at the interface due to the substitutional nature of the intermixing. First-principles calculations performed using structural models based on the aberration corrected electron microscopy show that the increased Si incorporation in the film leads to a gradual decrease of the magnetic moment as well as significant spin-polarization reduction. These effects can have significant detrimental role on the spin injection from the Co2FeAl0.5Si0.5 film into the Si substrate, besides the structural integrity of this junction.

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors.

The magnetic properties of Ni nanoparticles (Ni-NPs) embedded in an antiferromagnetic IrMn matrix were investigated. The Ni-NPs of 8.4 nm mean diameter were synthesized by inert gas aggregation. In a second processing step, the Ni-NPs were in situ embedded in IrMn films or SiOx films under ultrahigh vacuum (UHV) conditions. Findings showed that Ni-NPs embedded in IrMn have an exchange bias field HEB = 821 Oe at 10 K, and 50 Oe at 300 K. The extracted value of the exchange energy density is 0.06 mJ m(-2) at 10 K, which is in good accordance with the results from multilayered thin film systems. The Ni-NPs embedded in SiOx did not show exchange bias. As expected for this particle size, they are superparamagnetic at T = 300 K. A direct comparison of the Ni-NPs embedded in IrMn or SiOx reveals an increase of the blocking temperature from 210 K to around 400 K. The coercivity of the Ni-NPs exchange coupled to the IrMn matrix at 10 K is 8 times larger than the value for Ni-NPs embedded in SiOx. We studied time-dependent remanent magnetization at different temperatures. The relaxation behavior is described by a magnetic viscosity model which reflects a rather flat distribution of energy barriers. Furthermore, we investigated the effects of different field cooling processes on the magnetic properties of the embedded Ni-NPs. Exchange bias values fit to model calculations which correlate the contribution of the antiferromagnetic IrMn matrix to its grain size.

We show a direct evidence for the impact of Heusler/semiconductor interfaces atomic structure on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices. Based on atomic scale Z contrast scanning transmission electron microscopy and energy dispersive x-ray spectroscopy we show that atomic order/disorder of Co2FeAl0.5Si0.5 (CFAS)/n-Ge LSV devices is critical for the spin injection in Ge. By conducting a post annealing of the LSV devices, we find 90% decrease in the spin signal while there is no difference in the electrical properties of the CFAS/n-Ge contacts and in the spin diffusion length of the n-Ge layer. We show that the reduction in the spin signals after annealing is attributed to the presence of intermixing phases at the Heusler/semiconductor interface. First principles calculations show how that intermixed interface region has drastically reduced spin polarisation at the Fermi level, which is the main cause for the significant decrease of the spin signal in the annealed devices above 300 • C.

We have investigated the magnetic damping of precessional spin dynamics in defect-controlled epitaxial grown Fe 3 O 4 (111)/Yttria-stabilized Zirconia (YSZ) nanoscale films by all-optical pump-probe measurements. The intrinsic damping constant of the defect-free Fe 3 O 4 film is found to be strikingly larger than that of the asgrown Fe 3 O 4 film with structural defects. We demonstrate that the population of the first-order perpendicular standing spin wave (PSSW) mode, which is exclusively observed in the defect-free film under sufficiently high external magnetic fields, leads to the enhancement of the magnetic damping of the uniform precession (Kittel) mode. We propose a physical picture in which the PSSW mode acts as an additional channel for the extra energy dissipation of the Kittel mode. The energy transfer from Kittel mode to PSSW mode increases as in-plane magnetization precession becomes more uniform, resulting in the unique intrinsic magnetic damping enhancement in the defect-free Fe 3 O 4 film.The photo-induced precessional spin dynamics in various magnetic materials has attracted significant attention since the observation of the uniform magnetic precession (Kittel mode) and the corresponding first-order perpendicular standing spin wave (PSSW mode) in Ni films by the all-optical pump-probe technique. 1,2 After excitation by a femtosecond laser pulse, besides the uniform Kittel mode, different spin wave modes can be stimulated including first-order PSSW and Damon-Eshbach dipolar surface spin waves (DE modes). 3 At the same time, all-optical pump-probe measurements allow determination of the magnetic Gilbert damping α, 4,5 which is a key parameter for magnetic data recording and the nextgeneration spintronic memory devices such as Magnetoresistive Random Access Memory (MRAM) 6,7 . Therefore, understanding and controlling the magnetic damping is of crucial importance. Among many factors affecting the magnetic damping, structural defects are crucial because they are generally inevitable when preparing films or devices. It was proposed theoretically that defects scatter the Kittel mode into short wavelength spin waves via two magnon scattering, producing an extrinsic contribution to magnetic damping. 8 This extrinsic mechanism was verified by the fact that in thin NiFe films the FMR linewidth increases with decreasing thickness. 9

Magnetic topological insulators (TIs) are an ideal playground for the study of novel quantum phenomena building on time-reversal symmetry-broken topological surface states. By combining different magnetic TIs in a heterostructure, their magnetic and electronic properties can be precisely tuned. Recently, we have combined high-moment Dy:Bi 2 Te 3 with high transition temperature Cr:Sb 2 Te 3 in a superlattice, and we found, using x-ray magnetic circular dichroism (XMCD), that long-range magnetic order can be introduced in the Dy:Bi 2 Te 3 layers. Accompanying first-principles calculations indicated that the origin of the long-range magnetic order is a strong antiferromagnetic coupling between Dy and Cr magnetic moments at the interface extending over several layers. However, based on XMCD alone, which is either averaging over the entire thin-film stack or is surface-sensitive, this coupling scenario could not be fully confirmed. Here we use polarized neutron reflectometry, which is ideally suited for the detailed study of superlattices, to retrieve the magnetization in a layer-and interfaceresolved way. We find that the magnetization is, in contrast to similar recent studies, homogeneous throughout the individual layers, with no apparent interfacial effects. This finding demonstrates that heterostructure engineering is a powerful way of controlling the magnetic properties of entire layers, with the effects of coupling reaching beyond the interface region.