The
oxide interfaces between materials with different
structural
symmetries have been actively studied due to their novel physical
properties. However, the investigation of intriguing interfacial phenomena
caused by the oxygen octahedral tilt (OOT) proximity effect has not
been fully exploited, as there is still no clear understanding of
what determines the proximity length and what the underlying control
mechanism is. Here, we achieved scalability of the OOT proximity effect
in SrRuO3 (SRO) by epitaxial strain near the SRO/SrTiO3 heterointerface. We demonstrated that the OOT proximity length
scale of SRO is extended from 4 unit cells to 14 unit cells by employing
advanced scanning transmission electron microscopy. We also suggest
that this variation may originate from changes in phonon dispersions
due to electron–phonon coupling in SRO. This study will provide
in-depth insights into the structural gradients of correlated systems
and facilitate potential device applications.
Cu 3 Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu 3 Sn single crystals is, therefore, highly desired to investigate the possible topological properties. In this work, we report the single crystal growth of Cu 3 Sn by Czochralski (CZ) method. Crystal structure, chemical composition, and transport properties of Cu 3 Sn single crystals were analyzed to verify the crystal quality. Notably, compared to the mm-sized crystals from a molten Sn flux, the cm-sized crystals obtained by the CZ method are free from contamination from flux materials, paving the way for the follow-up works.
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